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簡要描述:硒化铟晶體(tǐ) In2Se3(Indium Selenide)
晶體(tǐ)尺寸:8-10毫米
電(diàn)學性能:半導體(tǐ)
晶體(tǐ)結構:六邊形
晶胞參數:a = b = 0.398 nm, c = 18.89 nm, α = β = 90°, γ = 120°
晶體(tǐ)類型:合成
晶體(tǐ)純度:>99.995%
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硒化铟晶體(tǐ) In2Se3(Indium Selenide)
晶體(tǐ)尺寸:8-10毫米
電(diàn)學性能:半導體(tǐ)
晶體(tǐ)結構:六邊形
晶胞參數:a = b = 0.398 nm, c = 18.89 nm, α = β = 90°, γ = 120°
晶體(tǐ)類型:合成
晶體(tǐ)純度:>99.995%
X-ray diffraction on a 2H-In2Se3 (Indium Selenide) single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 8 XRD peaks correspond, from left to right, to (00l) with l = 4, 6, 8, 10, 12, 14, 16, 18
Powder X-ray diffraction (XRD) of a single crystal In2Se3. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.
Stoichiometric analysis of a single crystal In2Se3 by Energy-dispersive X-ray spectroscopy (EDX).
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