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簡要描述:二硒化铼晶體(tǐ) ReSe2(Rhenium Selenide)
晶體(tǐ)尺寸:~8毫米
電(diàn)學性能:n型半導體(tǐ)
晶體(tǐ)結構:三斜晶系
晶胞參數:a = 0.658 nm, b = 0.670 nm, c = 0.672 nm, α = 91.75°, β = 105°, γ = 118.9°
晶體(tǐ)類型:合成
晶體(tǐ)純度:>99.995%
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二硒化铼晶體(tǐ) ReSe2(Rhenium Selenide)
晶體(tǐ)尺寸:~8毫米
電(diàn)學性能:n型半導體(tǐ)
晶體(tǐ)結構:三斜晶系
晶胞參數:a = 0.658 nm, b = 0.670 nm, c = 0.672 nm, α = 91.75°, β = 105°, γ = 118.9°
晶體(tǐ)類型:合成
晶體(tǐ)純度:>99.995%
X-ray diffraction on a ReSe2 single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 5 XRD peaks correspond, from left to right, to (00l) with l = 1, 2, 3, 4, 5
Powder X-ray diffraction (XRD) of a single crystal . X-ray diffraction was performed at room temperature using a D8 Venture Bruker.
Stoichiometric analysis of a single crystal by Energy-dispersive X-ray spectroscopy (EDX).
Raman spectrum of a single crystal . Measurement was performed with a 785 nm Raman system at room temperature.
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