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二硫化铼晶體(tǐ)(百分(fēn)之99.995) ReS2

簡要描述:二硫化铼晶體(tǐ) ReS2 (Rhenium Disulfide)
晶體(tǐ)結構:三斜晶晶體(tǐ)尺寸:~8毫米
電(diàn)學性能:N型半導體(tǐ)
晶體(tǐ)結構:三斜晶系
晶胞參數:a = 0.634, b = 0.640 nm, c = 0.645 nm, α = 106.74°, β = 119.03°, γ = 89.97°
晶體(tǐ)類型:合成
晶體(tǐ)純度:>99.995%

  • 産品型号:
  • 廠商(shāng)性質:生(shēng)産廠家
  • 更新時間:2018-07-09
  • 訪  問  量:1707

詳細介紹

二硫化铼晶體(tǐ) ReS2 (Rhenium Disulfide)
晶體(tǐ)結構:三斜晶晶體(tǐ)尺寸:~8毫米
電(diàn)學性能:N型半導體(tǐ)
晶體(tǐ)結構:三斜晶系
晶胞參數:a = 0.634, b = 0.640 nm, c = 0.645 nm, α = 106.74°, β = 119.03°, γ = 89.97°
晶體(tǐ)類型:合成
晶體(tǐ)純度:>99.995%

X-ray diffraction on a ReS2 single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 5 XRD peaks correspond, from left to right, to (00l) with l = 2, 4, 6, 8

 

Powder X-ray diffraction (XRD) of a single crystal ReS2. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.

 

Stoichiometric analysis of a single crystal ReS2 by Energy-dispersive X-ray spectroscopy (EDX).

 

Raman spectrum of a single crystal ReS2. Measurement was performed with a 785 nm Raman system at room temperature.

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