TaS2 （2H-phase） 2H-二硫化钽晶體(tǐ)

Environmentally stable 2H-TaS2 crystals have been synthesized at our facilities through flux zone method or chemical vapor transport (CVT) technique. 2H-TaS2 is a metal with charge density waves (incommensurate CDW). It has superconducting transition at around 1-2K depending on the defect concentration. It becomes CDW metal at temperatures lower than 80K. While both 2H- and 1T-phase TaS2 crystals exhibit CDW behavior, temperature onset for CDW behavior show considerable differences (1T~175K where as 2H~80K). Our TaS2 crystals are perfectly layered, cleaved in 0001 direction, with ultra-low defect concentration. Flux zone grown 2H-TaS2 crystals come with guaranteed CDW behavior. For our 1T-TaS2 crystals please click here.

Flux zone vs. CVT growth method: Contamination and defects in TaS2 crystals are well known to influence CDW behavior. (temperature onset, ability to observe, sheet resistance). Flux zone technique is a halide free and slow growth technique used for synthesizing truly electronic grade vdW crystals. This method distinguishes itself from chemical vapor transport (CVT) technique provides quick (~2 weeks) growth but poor crystalline quality while flux method takes ~3 months, ensures slow crystallization for perfect atomic structuring, and impurity free crystal growth. During check out just state which type of growth process is preferred. Unless otherwise stated, 2Dsemiconductors ships Flux zone crystals as default choice.

Properties of 2H phase TaS2 crystals - 2Dsemiconductors USA