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簡要描述:黑砷磷/晶體(tǐ)黑磷-砷合金 BP-As alloy (Black Phosphorus-Arsenic Alloy)
晶體(tǐ)尺寸:~mm
電(diàn)學性能:半導體(tǐ)
晶體(tǐ)結構:斜方晶系
晶胞參數:晶胞參數取決于合金中(zhōng)的成分(fēn)。p/As比值爲1
a = b = 0.338 nm, b = 10.743 nm, c = 0.446 nm, α = β = γ = 90°
晶體(tǐ)類型:合成
晶體(tǐ)純度:>99.995%
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黑砷磷/晶體(tǐ)黑磷-砷合金 BP-As alloy (Black Phosphorus-Arsenic Alloy)
晶體(tǐ)尺寸:~mm
電(diàn)學性能:半導體(tǐ)
晶體(tǐ)結構:斜方晶系
晶胞參數:晶胞參數取決于合金中(zhōng)的成分(fēn)。p/As比值爲1
a = b = 0.338 nm, b = 10.743 nm, c = 0.446 nm, α = β = γ = 90°
晶體(tǐ)類型:合成
晶體(tǐ)純度:>99.995%
Powder X-ray diffraction (XRD) of a single crystal P-As. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.
Stoichiometric analysis of a single crystal P-As by Energy-dispersive X-ray spectroscopy (EDX).
Raman spectrum of a single crystal P-As. Measurement was performed with a 785 nm Raman system at room temperature.
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