當前位置:首頁 > 産品中(zhōng)心 > 二維材料 >
a-MoO3 is a layered vdW semiconductor with a crystal structure that belongs to the space group Pbnm 62 (see unit cell parameters below). In its layered form,
【巨納】基于石英基底的單層連續二硫化钼薄膜(10*10mm)
GeP has highly anisotropic dispersions of band structures, with a layer-dependent indirect band gap from (theoretically predicted) 1.68 eV of monolayer to 0.51 eV of bulk.
【巨納】三角形單層二硫化鎢(10*10mm)-襯底可選
Our single crystal GeAs (Germanium arsenide) crystals come with guaranteed anisotropy, electronic, and optical grade crystal quality.
【巨納】單層二硫化鎢(10x10mm)連續薄膜-襯底可選
聯系我(wǒ)(wǒ)們
上海磊矶科技有限公司 公司地址:上海市虹口區寶山路778号海倫國際大(dà)廈5樓 技術支持:化工(gōng)儀器網掃一(yī)掃 更多精彩
微信二維碼
網站二維碼
微信掃一(yī)掃